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| DISCRETE SEMICONDUCTORS DATA SHEET BU4508AF Silicon Diffused Power Transistor Product specification Supersedes data of January 1998 File under Discrete Semiconductors, SC06 June 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4508AF GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers an p.c monitors. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Fall time CONDITIONS VBE = 0 V TYP. 5.0 4.0 0.35 0.17 MAX. 1500 800 8 15 45 3.0 0.48 UNIT V V A A W V A A s s Ths 25 C IC = 5.0 A; IB = 1.25 A f = 16kHz f = 64kHz ICsat = 5A; f = 16kHz ICsat = 4A; f = 64kHz PINNING - SOT199 PIN 1 2 3 base collector emitter DESCRIPTION PIN CONFIGURATION case SYMBOL c b case isolated 1 2 3 e LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -55 MAX. 1500 800 8 15 4 6 5 45 150 150 UNIT V V A A A A A W C C Ths 25 C THERMAL RESISTANCES SYMBOL Rth j-hs Rth j-a PARAMETER Junction to heatsink Junction to ambient CONDITIONS with heatsink compound in free air TYP. 35 MAX. 2.8 UNIT K/W K/W 1 Turn-off current. June 1998 1 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4508AF ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 C unless otherwise specified SYMBOL Visol PARAMETER Repetitive peak voltage from all three terminals to external heatsink CONDITIONS R.H. 65 % ; clean and dustfree MIN. TYP. MAX. 2500 UNIT V Cisol Capacitance from T2 to external f = 1 MHz heatsink - 22 - pF STATIC CHARACTERISTICS Ths = 25 C unless otherwise specified SYMBOL ICES ICES IEBO BVEBO VCEOsust VCEsat VBEsat hFE hFE PARAMETER Collector cut-off current 2 CONDITIONS MIN. 7.5 800 0.85 4.2 TYP. 13.5 0.94 12 5.7 MAX. 1.0 2.0 100 3.0 1.03 7.3 UNIT mA mA uA V V V V VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 C Emitter cut-off current VEB = 6.0 V; IC = 0 A Emitter-base breakdown voltage IB = 1 mA Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; L = 25 mH Collector-emitter saturation voltages IC = 5.0 A; IB = 1.25 A Base-emitter saturation voltage IC = 5.0 A; IB = 1.25 A DC current gain IC = 100 mA; VCE = 5 V IC = 5.0 A; VCE = 5 V DYNAMIC CHARACTERISTICS Ths = 25 C unless otherwise specified SYMBOL Cc PARAMETER Collector capacitance Switching times (16 kHz line deflection circuit) Turn-off storage time Turn-off fall time Switching times (64 kHz line deflection circuit) Turn-off storage time Turn-off fall time ICsat = 4 A; IB1 = 0.8 A;(IB2 = -2.0 A) 1.9 0.17 s s CONDITIONS IE = 0 A; VCB = 10 V; f = 1 MHz ICsat = 5.0 A; IB1 = 1.0 A;(IB2 = -2.5 A) 3.2 0.35 4.3 0.48 s s TYP. 80 MAX. UNIT pF ts tf ts tf 2 Measured with half sine-wave voltage (curve tracer). June 1998 2 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4508AF ICsat + 50v 100-200R IC 90 % Horizontal tf 10 % Oscilloscope IB t ts IB1 Vertical 100R 6V 30-60 Hz 1R t - IB2 Fig.1. Test circuit for VCEOsust. Fig.4. Switching times definitions. IC / mA + 150 v nominal adjust for ICsat Lc 250 200 100 IBend LB T.U.T. Cfb 0 VCE / V min VCEOsust -VBB Fig.2. Oscilloscope display for VCEOsust. Fig.5. Switching times test circuit. TRANSISTOR IC DIODE ICsat 100 hFE Ths = 25 C Ths = 85 C VCE = 1V t IB IB1 t 20us 26us 64us IB2 10 VCE 1 0.001 t 0.01 0.1 1 IC / A 10 Fig.3. Switching times waveforms (16 kHz). Fig.6. High and low DC current gain. June 1998 3 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4508AF 100 hFE 10 VCE = 5V Ths = 25 C Ths = 85 C ts/tf / us ICsat = 5 A Ths = 85 C Freq = 16 kHz 8 6 10 ts 4 2 tf 1 0.001 0.01 0.1 1 IC / A 10 0 0 0.5 1 1.5 2 2.5 IB / A 3 Fig.7. High and low DC current gain. Fig.10. Typical collector storage and fall time. IC =5 A; Tj = 85C; f = 16kHz Normalised Power Derating with heatsink compound 10 VCEsat / V BU4508AF/X/Z 120 110 100 90 80 70 60 50 40 30 20 10 0 PD% Ths = 25 C Ths = 85 C 1 0.1 IC/IB = 5 0.01 0.1 0 1 10 IC / A 100 20 40 60 80 Ths / C 100 120 140 Fig.8. Typical collector-emitter saturation voltage. Fig.11. Normalised power dissipation. PD% = 100PD/PD 25C Zth K/W 10 1.2 VBEsat / V BU4508AF/X/Z Ths = 25 C Ths = 85 C BU4508AF 1.1 IC = 5 A 0.5 1 0.2 0.1 0.05 0.1 0.02 1 0.9 0.8 IC = 4 A 0.01 P D tp D= tp T t 1.0E+01 0.7 0 T 1.0E-05 1.0E-03 1.0E-01 0.6 0.001 1.0E-07 0 0.5 1 1.5 2 2.5 IB / A 3 t/s Fig.9. Typical base-emitter saturation voltage. Fig.12. Transient thermal impedance. June 1998 4 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4508AF 10 Ic(sat) (A) 8 6 4 2 0 0 20 40 60 Frequency (kHz) 80 100 Fig.13. ICsat during normal running vs. frequency of operation for optimum performance June 1998 5 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4508AF MECHANICAL DATA Dimensions in mm Net Mass: 5.5 g 15.3 max 0.7 7.3 3.1 3.3 6.2 5.8 21.5 max 3.2 5.2 max o 45 seating plane 3.5 3.5 max not tinned 15.7 min 1 2.1 max 2 3 1.2 1.0 5.45 0.7 max 0.4 M 2.0 5.45 Fig.14. SOT199; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". June 1998 6 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4508AF DEFINITIONS Data sheet status Objective specification Product specification Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. June 1998 7 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor NOTES BU4508AF June 1998 8 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor NOTES BU4508AF June 1998 9 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor NOTES BU4508AF June 1998 10 Rev 1.000 Philips Semiconductors - a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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No. 5, 80640 GULTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777 Internet: http://www.semiconductors.philips.com For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1998 SCA60 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 135104/150/03/pp12 Date of release: June 1998 Document order number: 9397 750 04011 |
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